d i p ty p e t r a n s i s t o r s 2n540 1 absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-ba se voltage v cbo -160 v collector-emit ter voltage v ceo -150 v em itt er-b ase voltage v ebo -5 v collector current-continuous i c -600 m a collector pow er dissi pation pc 625 m w junct ion and storage tem pera ture t j , t stg -55 to +150 ele ctric al characteristics t a = 2 5 paramet er sym bol test c onditions min typ ma x unit collector-ba se breakdow n voltage v (br)cbo i c = -100 a, i e = 0 -160 v collector-emit ter breakdow n voltage v (br)ceo i c =- 1.0 m a, i b = 0 -150 v em itt er- base brea kdow n voltage v (br)ebo i e = -10 a, i c = 0 -5 v collector cutof f c urr ent i cbo v cb =- 120 v, i e = 0 -50 na em itt er cutoff c urr ent i ebo v eb = -3.0 v , i c = 0 -50 n a i c = -1.0 m a, v ce = -5 v 50 i c = -10 m a, v ce = -5 v 60 240 i c = -50 m a, v ce = -5 v 50 collector-emit ter sat uration v oltage v ce(sat) i c = -50 m a, i b = -5.0 m a -0.5 v base-em itt er saturation voltage v be(sat) i c = -50 m a, i b = -5.0 m a -1.0 v transist on freque ncy f t v ce =-5v,i c =-10 m a,f =30m hz 100 300 mh z h fe dc curre nt gain features sw itc hing and amplif icat ion in high voltage applicat ions s uch as telephony low c urre nt(m ax . 600m a) high vo ltage(m ax .150v) 1. emitter to-92 1 2. base 3. collector 2 3 sales@twtysemi.com 1 of 1 http://www.twtysemi.com s m d ty p e t r a n s i s t o r s s m d ty p e t r a n s i s t o r s s m d ty p e i c d i p ty p e t r a n s i s t o r product specification 4008-318-123
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